A detailed analysis scheme to interpret multiple photon emissions micrograph for improved diagnostic resolution on open defects
作者： S. H. Goh , Edmund C Manlangit , Edy Susanto , B. L. Yeoh , Hu Hao
DOI: 10.1109/IPFA.2017.8060217
关键词:
摘要: Photon Emission Microscopy is the most widely used mainstream defect isolation technique in failure analysis labs. It easy to perform and has a fast turnaround time for results. However, interpreting photon emission micrograph postulate suspected site accurately challenging when there are multiple abnormal hotspots driving nets involved. This commonly encountered dynamic micrographs that caused by open defects digital logic. paper presents methodology incorporating layout-aware trace post schematic extraction with test bench enhance diagnostic resolution on defective net(s).
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