AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

作者: Wojciech Wojtasiak , Marcin Góralczyk , Daniel Gryglewski , Marcin Zając , Robert Kucharski

DOI: 10.3390/MI9110546

关键词:

摘要: AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

参考文章(35)
Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Verma, Xiang Gao, Shiping Guo, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, Mark Wistey, Debdeep Jena, Huili Xing, MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ IEEE Electron Device Letters. ,vol. 33, pp. 525- 527 ,(2012) , 10.1109/LED.2012.2186116
Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality Physica Status Solidi (a). ,vol. 212, pp. 1091- 1098 ,(2015) , 10.1002/PSSA.201431636
E. Kaminska, A. Piotrowska, A. Szczesny, A. Kuchuk, R. Lukasiewicz, K. Golaszewska, R. Kruszka, A. Barcz, R. Jakiela, E. Dynowska, A. Stonert, A. Turos, Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT Physica Status Solidi (c). ,vol. 2, pp. 1060- 1064 ,(2005) , 10.1002/PSSC.200460620
Martin Kuball, Milan Ťapajna, Richard J.T. Simms, Mustapha Faqir, Umesh K. Mishra, AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes Microelectronics Reliability. ,vol. 51, pp. 195- 200 ,(2011) , 10.1016/J.MICROREL.2010.08.014
R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Excellent crystallinity of truly bulk ammonothermal GaN Journal of Crystal Growth. ,vol. 310, pp. 3911- 3916 ,(2008) , 10.1016/J.JCRYSGRO.2008.06.036
Roland B. Simon, Julian Anaya, Martin Kuball, Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation Applied Physics Letters. ,vol. 105, pp. 202105- ,(2014) , 10.1063/1.4901967
Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik, Ramon Collazo, Boleslaw Lucznik, Jan L. Weyher, Grzegorz Nowak, Bogdan Sadovyi, Grzegorz Kamler, Robert Kucharski, Marcin Zajac, Roman Doradzinski, Robert Dwilinski, Izabella Grzegory, Michal Bockowski, Zlatko Sitar, Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds Applied Physics Express. ,vol. 6, pp. 075504- ,(2013) , 10.7567/APEX.6.075504
P Kruszewski, P Prystawko, I Kasalynas, A Nowakowska-Siwinska, M Krysko, J Plesiewicz, J Smalc-Koziorowska, R Dwilinski, M Zajac, R Kucharski, M Leszczynski, AlGaN/GaN HEMT structures on ammono bulk GaN substrate Semiconductor Science and Technology. ,vol. 29, pp. 075004- ,(2014) , 10.1088/0268-1242/29/7/075004