Erase Mechanism for Copper Oxide Resistive Switching Memory Cells with Nickel Electrode
作者： Tzu-Ning Fang , Swaroop Kaza , Sameer Haddad , An Chen , Yi-Ching Wu
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摘要: A Metal-Insulator-Metal (MIM) device based on a Cu2O insulator has electrical characteristics significantly dependent the oxide to top electrode (TE) interface. Cu/Cu2O/TE devices with various electrodes have different thermal release characteristics, related trap depth. The behavior of during erase Ni and Ti suggests mechanisms. This paper focuses Cu/Cu2O/Ni proposes model, power calculations temperature dependence.
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