作者: O Dial , Chuan-Cheng Cheng , Axel Scherer
DOI: 10.1116/1.590428
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摘要: We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional voltages (< 40 kV). Here we optimize the exposure and development conditions needed generate such nanostructure arrays using polymethylmethacrylate as positive resist isopropyl alcohol developer. Arrays of 12 nm dots with 25 period 20 lines were fabricated show resolution this optimized process.