Material and optical properties of Trenched Epitaxial Lateral Overgrowth of a‐plane GaN
作者： Te-Chung Wang , Tien-Chang Lu , Tsung-Shine Ko , Hao-Chung Kuo , Hou-Guang Chen
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摘要: The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) GaN. Not only the threading dislocation density but also difference anisotropic in-plane strain between orthogonal axes can be mitigated TELOG. low investigated transmission electron microscopy estimated to 3×107 cm–2 on N-face wing. According results μ-PL and CL, dislocations are strongly non-radiative center in film. Finally, we concluded that a narrower stripped seeds deeper trenches etched into surface sapphire could derive better (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
nctu.edu.tw参考文章(9)
P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Nature. ,vol. 406, pp. 865- 868 ,(2000) , 10.1038/35022529
M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire Applied Physics Letters. ,vol. 81, pp. 469- 471 ,(2002) , 10.1063/1.1493220
P. Waltereit, O. Brandt, M. Ramsteiner, A. Trampert, H.T. Grahn, J. Menniger, M. Reiche, R. Uecker, P. Reiche, K.H. Ploog, Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides Physica Status Solidi (a). ,vol. 180, pp. 133- 138 ,(2000) , 10.1002/1521-396X(200007)180:1<133::AID-PSSA133>3.0.CO;2-A
P Fini, H Marchand, J.P Ibbetson, S.P DenBaars, U.K Mishra, J.S Speck, Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction Journal of Crystal Growth. ,vol. 209, pp. 581- 590 ,(2000) , 10.1016/S0022-0248(99)00634-X
M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN Applied Physics Letters. ,vol. 81, pp. 1201- 1203 ,(2002) , 10.1063/1.1498010
W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, Z.R. Zytkiewicz, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen, Determination of crystal misorientation in epitaxial lateral overgrowth of GaN Journal of Crystal Growth. ,vol. 243, pp. 94- 102 ,(2002) , 10.1016/S0022-0248(02)01484-7
Hongmei Wang, Changqing Chen, Zheng Gong, Jianping Zhang, Mikhail Gaevski, Ming Su, Jinwei Yang, M. Asif Khan, Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire Applied Physics Letters. ,vol. 84, pp. 499- 501 ,(2004) , 10.1063/1.1644054
Bilge M. Imer, Feng Wu, Steven P. DenBaars, James S. Speck, Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth Applied Physics Letters. ,vol. 88, pp. 061908- ,(2006) , 10.1063/1.2172159
E. S. Hellman, Z. Liliental-Weber, D. N. E. Buchanan, Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2 Mrs Internet Journal of Nitride Semiconductor Research. ,vol. 2, pp. 1- 11 ,(1997) , 10.1557/S1092578300001563