An advanced bimode insulated gate transistor BIGT with low diode conduction losses under a positive gate bias

摘要: Despite the previously reported benefits of High Voltage Reverse Conducting RC-IGBT concepts such as BIGT, main obstacle for adopting them in mainstream applications is dependency diode conduction losses on applied gate voltage polarity. In most applications, adaptations are required at both control and drive levels providing lower losses. The paper investigates this particular issue with respect to device design. With aid simulation experimental results, an advanced low loss which can operate efficiently under all bias conditions proposed.