Residual layer uniformity using complementary patterns to compensate for pattern density variation in UV nanoimprint lithography

摘要: How to form a thin and uniform residual layer, which is difficult be created for feature with nonuniform pattern densities, of critical importance in nanoimprint lithography since layer removal by reactive ion etching process will result poor transfer fidelity layers. A capacity-equalized mold using complementary cavity patterns balance the imprinted volume density variation was verified good method against producing layer. To obtain an insight into validity mold, effects introduced capacity equalization on at locations that were not only distance away from but also ones very close patterns, carefully studied. It found even coarse as large 10 times minimum width original could showed thickness mainly determined trench varied depths per unit area, size patterns. Furthermore, local nonuniformity induced themselves The authors this had little influence contributed low viscosity UV-curable resin. produced due presence air bubbles.