Photoluminescence studies of individual and few GaSb/GaAs quantum rings
作者： M. P. Young , C. S. Woodhead , J. Roberts , Y. J. Noori , M. T. Noble
DOI: 10.1063/1.4902177
关键词:
摘要: We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination are observed have resolution-limited full-width at half maximum 200 μeV. The detail provided by these measurements allows the characteristic blueshift, with increasing excitation power, be studied level nanostructures. findings agreement hole-charging being origin blueshift.
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