作者: Jonathan R Orchard , Chris Woodhead , Jiang Wu , Mingchu Tang , Richard Beanland
DOI: 10.1021/ACSPHOTONICS.7B00276
关键词:
摘要: We report the observation of single quantum dot (QD) emission in telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift is achieved by capping QDs with thin GaAsSb layer. Sharp lines, representing QDs, are observed out to wavelengths as long 1540 nm. Comparison made optical properties nominally identical active region GaAs Single Si-based system at 1500 nm has potential for photon sources compatible current fibers and reduced complexity integration drive electronics.