MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

摘要: Abstract Preparation and properties of InAs/GaAs quantum dots (QDs) prepared by the MOVPE technology covered GaAsSb strain reducing layer (SRL) with extremely long emission wavelength at 1.8 µm will be presented. Increase was achieved introduction SRL Sb content about 30% in solid phase. The high concentration causes preservation QD size, which is 15 nm wide base 5 nm high. Increased size increases photoluminescence (PL) wavelength. Furthermore, antimony leads to a creation type II heterostructure for redshift PL decrease intensity are typical. Low may complicate light emitting applications; however fast separation carriers structure an advantage detector or solar cell application, especially working With respect perspective application this structure, photocurrent (PC) measurement chosen as complementary characterization method. A depression PC well region (approximately 900–1200 nm) observed positive bias, while from QDs (over 1200 nm) not sensitive electric field orientation all. An explanation unexpected phenomenon suggested.