Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition
作者： A Hospodková , M Zíková , J Pangrác , J Oswald , J Kubištová
DOI: 10.1088/0022-3727/46/9/095103
关键词:
摘要: The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure InAs/GaAs QDs covered a GaAsSb strain-reducing layer. Our results proved that type I or II band alignment can be controlled both composition and QD size. Maintaining heterostructure important for high luminescence efficiency emission wavelength stability structure. simulation electron in InAs with layer as well experimental suggest importance increasing size obtaining longer PL from heterostructure. maximum 1371 nm was achieved MOVPE 14% Sb GaAsSb. This exhibits seven times higher intensity, twice narrower peak 85 meV redshift comparison similarly GaAs.
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sci-hub.se 参考文章(25)
Alice Hospodkov, Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers InTech. ,(2012) , 10.5772/35632
S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl, Modeling of Semiconductor Nanostructures with nextnano 3 Acta Physica Polonica A. ,vol. 110, pp. 111- 124 ,(2006) , 10.12693/APHYSPOLA.110.111
A. Hospodková, V. Křápek, K. Kuldová, J. Humlíček, E. Hulicius, J. Oswald, J. Pangrác, J. Zeman, Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures Physica E-low-dimensional Systems & Nanostructures. ,vol. 36, pp. 106- 113 ,(2007) , 10.1016/J.PHYSE.2006.09.010
A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius, Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Journal of Crystal Growth. ,vol. 315, pp. 110- 113 ,(2011) , 10.1016/J.JCRYSGRO.2010.09.041
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, P Navaretti, KM Groom, M Hopkinson, RA Hogg, None, Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer Applied Physics Letters. ,vol. 86, pp. 143108- ,(2005) , 10.1063/1.1897850
K. Kuldová, V. Křápek, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, E. Hulicius, M. Potemski, J. Humlíček, 1.3 µm emission from InAs/GaAs quantum dots physica status solidi (c). ,vol. 3, pp. 3811- 3814 ,(2006) , 10.1002/PSSC.200671535
C. Y. Jin, H. Y. Liu, S. Y. Zhang, Q. Jiang, S. L. Liew, M. Hopkinson, T. J. Badcock, E. Nabavi, D. J. Mowbray, Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer Applied Physics Letters. ,vol. 91, pp. 021102- ,(2007) , 10.1063/1.2752778
M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers, Growth of strained GaAsSb layers on GaAs (001) by MOVPE Journal of Crystal Growth. ,vol. 276, pp. 347- 353 ,(2005) , 10.1016/J.JCRYSGRO.2004.11.420
A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Surface Science. ,vol. 604, pp. 318- 321 ,(2010) , 10.1016/J.SUSC.2009.11.023
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156