Low-loss nonselectively oxidized AlxGa1−xAs heterostructure waveguides
作者： Y. Lou , D. C. Hall
DOI: 10.1063/1.3058709
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摘要: The use of nonselective AlGaAs oxidation (i.e., via the controlled, dilute O2 addition during wet thermal oxidation) enables a significant propagation loss reduction in fully oxidized Al0.3Ga0.7As/Al0.85Ga0.15As planar oxide single heterostructure waveguides. Prism coupling measurements are utilized to characterize waveguide cladding and core layer thicknesses, refractive indices, loss. At wavelength 633 nm, above Al0.3Ga0.7As core’s bandgap energy, strongly absorbing semiconductor is converted by transparent with only 5.0 dB/cm (1.15 cm−1). A low 3.6 (0.83 cm−1) obtained at 1.3 μm.
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