Total Dose Effects in CMOS Trench Isolation Regions
作者： A. H. Johnston , R. T. Swimm , G. R. Allen , T. F. Miyahira
关键词:
摘要: A model for inversion in trench isolation is developed using an analytical to calculate the surface charge density along sidewall. The shows that path takes place well below corner devices with 180 nm feature size. increased hardness of highly scaled caused by a combination higher doping levels and decrease lateral collection within trench.
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