Epitaxial growth of Ni films by radio frequency sputtering on GaAs(001) with a TiN buffer
作者： Kenji Makihara , Arpad Barna , Mituru Hashimoto , Ji Shi , Susumu Maruyama
DOI: 10.1016/J.TSF.2005.03.028
关键词:
摘要: Abstract A study is made of the epitaxial growth structure a Ni film 123 nm thick on GaAs(001) pre-covered with TiN 3 to 118 in thickness. First, buffer layer prepared GaAs at temperature from 100 700 °C by reactively rf sputtering Ti N 2 gas flowing rate 1 10 sccm. Then deposited fresh between 200 and 500 pure Ar gas. X-ray diffraction transmission electron microscopy are used analyze crystal compositional samples. In our experiments, highly ordered was obtained crystallographic relationship Ni(001)[001] TiN(001)[001] GaAs(001)[001] deposition 1.0 sccm, followed 300 °C, where degree epitaxy depends conclusion, highest grown 13 buffer.
harvard.edu
elsevier.com
sci-hub.se 参考文章(10)
J. J. Krebs, B. T. Jonker, G. A. Prinz, Properties of Fe single‐crystal films grown on (100)GaAs by molecular‐beam epitaxy Journal of Applied Physics. ,vol. 61, pp. 2596- 2599 ,(1987) , 10.1063/1.337886
Jiping Yang, Kenji Makihara, Hisashi Nakai, Mituru Hashimoto, Arpad Barna, Peter B Barna, Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition Thin Solid Films. ,vol. 319, pp. 115- 119 ,(1998) , 10.1016/S0040-6090(97)01098-5
A Barna, B Pécz, M Menyhard, None, TEM sample preparation by ion milling/amorphization Micron. ,vol. 30, pp. 267- 276 ,(1999) , 10.1016/S0968-4328(99)00011-6
G. A. Prinz, Stabilization of bcc Co via epitaxial growth on GaAs. Physical Review Letters. ,vol. 54, pp. 1051- 1054 ,(1985) , 10.1103/PHYSREVLETT.54.1051
Kenji Makihara, Jiping Yang, Ji Shi, Mituru Hashimoto, Susumu Maruyama, Arpad Barna, Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film Journal of Vacuum Science and Technology. ,vol. 19, pp. 2494- 2498 ,(2001) , 10.1116/1.1388618
C. Carbone, B.T. Jonker, K.-H. Walker, G.A. Prinz, E. Kisker, The epitaxial growth of Fe on GaAs(110): Development of the electronic structure and interface formation Solid State Communications. ,vol. 61, pp. 297- 301 ,(1987) , 10.1016/0038-1098(87)90300-0
Y. U. Idzerda, B. T. Jonker, W. T. Elam, G. A. Prinz, Structure determination of metastable cobalt films deposited on GaAs Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 8, pp. 1572- 1576 ,(1990) , 10.1116/1.576767
X. Jiang X, Z. Jiang, W. Jiang, Q. Jia, W. Zheng, D. Xian, X. Wang, Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment. ,vol. 467, pp. 362- 365 ,(2001) , 10.1016/S0168-9002(01)00325-4
Árpád Barna, Topographic Kinetics and Practice of Low Angle Ion Beam Thinning MRS Proceedings. ,vol. 254, pp. 3- 22 ,(1991) , 10.1557/PROC-254-3
Ultrathin Magnetic Structures III Springer Berlin Heidelberg. ,(1994) , 10.1007/B138703