Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition

摘要: Abstract Ni films 200 nm thick are deposited on GaAs(001) substrates at 280°C by d.c. plasma sputtering 2.5 kV in pure Ar gas. A bias voltage V s from 0 to −180 is applied the substrate during deposition. The effect of film growth investigated measuring TCR 150 300 K, and resistance also AES, XTEM, RHEED observations. Minimum maximum observed between −80 −100 V. polycrystalline with a [001] texture, while an As 2 thin layer grown penetrating into GaAs Ni[111]‖GaAs[111] Ni[011]‖GaAs[011]. film, composing uniformly grains, obtained higher value =−80