Structural and electrical properties of Ni films grown on Si(100) and SiO2 by d.c. bias sputtering

摘要: Abstract Ni films are deposited on both pure and SiO 2 -covered Si(100) substrates at 190 °C by d.c. diode sputtering 2.5 kV in Ar. A bias volatage V s (0 to – 80 V) is applied the during deposition. study made mainly of effect structural electrical properties reflection high energy electron diffraction, transmission microscopy resistance measurements from 30 135 °C. Film-substrate interdiffusion observed Ni/Si but not Ni/SiO . adatoms diffuse preferentially along Si(111) with formation Si crystal. The grain size diffusion depth film increase non-columnar structure voids interface induced into as ranges 0 20 whereas a slightly inclined columnar = −20 Thick columns grow −80 systems. temperature coefficient resistance, η, positive for dependences η can be understood terms above-mentioned changes