Growth mode of Pt1−xNix films biased dc-sputter-deposited on MgO(0 0 1)
作者： Yoshimasa Amatatsu , Kenji Makihara , Ji Shi , Jiping Yang , Mituru Hashimoto
DOI: 10.1016/S0169-4332(00)00692-9
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摘要: Abstract A study is made by TEM, XRD and measuring electrical/magnetic properties, of growth mode properties Pt1−xNix alloy films deposited on MgO(0 0 1) at 250°C dc-sputtering 2.5–2.7 kV in Ar. bias voltage Vs≤−160 V was applied to the substrate during deposition. It confirmed that Pt film polycrystalline with texture Pt(1 1 1)/MgO(0 0 1) while Pt0.14Ni0.86 Pt0.19Ni0.81 were epitaxially grown Pt–Ni(0 0 1)[1 0 0]/MgO(0 0 1)[1 0 0] similarly case Ni/MgO(0 0 1). Thus transformation between Pt–Ni(1 1 1)/MgO(0 0 1) Pt–Ni(0 0 1)/MgO(0 0 1) may be induced x less than 0.81 for films. The temperature coefficient resistance TCR from 100 300 K estimated 0.0044–0.0053 K−1 saturation magnetization 1.7–3.2 kG, respectively, 0.0035–0.0048 K−1.
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