Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy
作者： H. P. Xin , K. L. Kavanagh , Z. Q. Zhu , C. W. Tu
DOI: 10.1116/1.590804
关键词:
摘要: A quantum dot-like behavior of GaInNAs in Ga0.7In0.3NxAs1−x/GaAs wells (QWs) grown by gas-source molecular-beam epitaxy has been studied using high-resolution x-ray rocking curves (XRC), cross-sectional transmission electron microscopy (XTEM), and photoluminescence (PL) spectroscopy. XRC determines the average alloy composition thickness QWs to be In 0.30 N 0–0.030, 6.2 nm, respectively. XTEM images show that both Ga0.7In0.3As/GaAs Ga0.7In0.3N0.02As0.98/GaAs are undulated with lateral variations strain, but latter is much rougher. For QWs, rapid thermal annealing results splitting a broad excitonic emission into two peaks presumably due fluctuation. The separation between these increases increasing concentration. Increasing excitation intensity significant blueshift for low-energy peak, while little high-energy peak. earlier PL can interpreted...
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