Effect of body biasing on single-event induced charge collection in deep N-well technology
作者： Yi Ding , Jian-Guo Hu , Jun-Rui Qin , Hong-Zhou Tan
DOI: 10.1088/1674-1056/24/7/079401
关键词:
摘要: As the device size decreases, soft error induced by space ions is becoming a great concern for reliability of integrated circuits (ICs). At present, body biasing technique widely used in highly scaled technologies. In paper, using three-dimensional technology computer-aided design (TCAD) simulation, we analyze effect on single-event charge collection deep N-well technology. Our simulation results show that mainly affects behavior source, and nMOSFET pMOSFET quite different. For nMOSFET, RBB will increase collection, while FBB reduce collection. pMOSFET, SET pulse width small, has an adverse effect. Moreover, differenceof compared twin well.
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