Recovery of single event upset in advanced complementary metal—oxide semiconductor static random access memory cells
作者： Jun-Rui Qin , Shu-Ming Chen , Bin Liang , Bi-Wei Liu
DOI: 10.1088/1674-1056/21/2/029401
关键词:
摘要: Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and effects spacing hit angle on are studied. It is found that multi-node charge collection plays a key role in shielding sharing by adding guard rings. cannot exhibit effect. also indicated linear energy transfer (LET) threshold kept constant while LET increases as increases. Additionally, effect incident analysed it shown larger can bring about stronger effect, thus strengthening ability.
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sci-hub.se 参考文章(14)
Li Hua, None, Monte Carlo simulation of the SRAM single event upset Acta Physica Sinica. ,vol. 55, pp. 3540- 3545 ,(2006) , 10.7498/APS.55.3540
Liu Zheng, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Zhao Zhen-Yu, Research of bipolar amplification effect in single event transient Acta Physica Sinica. ,vol. 59, pp. 649- 654 ,(2010) , 10.7498/APS.59.649
He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng, Test methods of total dose effects in verylarge scale integrated circuits Acta Physica Sinica. ,vol. 53, pp. 194- 199 ,(2004) , 10.7498/APS.53.194
Taiki Uemura, Yoshiharu Tosaka, Shigeo Satoh, Neutron-Induced Soft-Error Simulation Technology for Logic Circuits Japanese Journal of Applied Physics. ,vol. 45, pp. 3256- 3259 ,(2006) , 10.1143/JJAP.45.3256
P. Roche, G. Gasiot, Impacts of front-end and middle-end process modifications on terrestrial soft error rate IEEE Transactions on Device and Materials Reliability. ,vol. 5, pp. 382- 396 ,(2005) , 10.1109/TDMR.2005.853451
J.D. Black, A.L. Sternberg, M.L. Alles, A.F. Witulski, B.L. Bhuva, L.W. Massengill, J.M. Benedetto, M.P. Baze, J.L. Wert, M.G. Hubert, HBD layout isolation techniques for multiple node charge collection mitigation IEEE Transactions on Nuclear Science. ,vol. 52, pp. 2536- 2541 ,(2005) , 10.1109/TNS.2005.860718
Balaji Narasimham, Oluwole A. Amusan, Bharat L. Bhuva, Ronald D. Schrimpf, W. Timothy Holman, Extended SET Pulses in Sequential Circuits Leading to Increased SE Vulnerability IEEE Transactions on Nuclear Science. ,vol. 55, pp. 3077- 3081 ,(2008) , 10.1109/TNS.2008.2007121
T. Granlund, Bo Granbom, N. Olsson, Soft error rate increase for new generations of SRAMs IEEE Transactions on Nuclear Science. ,vol. 50, pp. 2065- 2068 ,(2003) , 10.1109/TNS.2003.821593
Kenneth P. Rodbell, David F. Heidel, Henry H. K. Tang, Michael S. Gordon, Phil Oldiges, Conal E. Murray, Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells IEEE Transactions on Nuclear Science. ,vol. 54, pp. 2474- 2479 ,(2007) , 10.1109/TNS.2007.909845
Oluwole A. Amusan, Lloyd W. Massengill, Mark P. Baze, Bharat L. Bhuva, Arthur F. Witulski, Sandeepan DasGupta, Andrew L. Sternberg, Patrick R. Fleming, Christopher C. Heath, Michael L. Alles, Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing IEEE Transactions on Nuclear Science. ,vol. 54, pp. 2584- 2589 ,(2007) , 10.1109/TNS.2007.907989