The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs
作者： Da-Wei Li , Jun-Rui Qin , Shu-Ming Chen
DOI: 10.1088/1674-1056/22/2/029401
关键词:
摘要: This paper investigates the temperature dependence of single-event transients (SETs) in 90-nm complementary metal—oxide semiconductor (CMOS) dual-well and triple-well negative field-effect transistors (NMOSFETs). Technology computer-aided design (TCAD) three-dimensional (3D) simulations show that drain current pulse duration increases from 85 ps to 245 for but only 65 98 when −55 °C 125 °C, which is closely correlated with NMOSFET sources. reveals width due weakening anti-amplification bipolar effect while enhancement amplification.
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