Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials
作者： Kaichen Zhu , Shaochuan Chen , Mario Lanza , Marco A. Villena , Fei Hui
DOI: 10.1016/J.MICROREL.2019.113410
关键词:
摘要: Abstract Chemical vapor deposition (CVD) is one of the most common techniques to grow large-area hexagonal boron nitride (h-BN). However, substrate on which h-BN grown plays an important role in electrical properties this insulating material. The high temperature used during CVD process produces polycrystallization metallic substrates, may modify h-BN/metal from grain another. In work, we compare CVD-grown multilayer three different substrates: Pt, Cu and Fe. This study reveals that based devices variate remarkably On contrary, behavior not relevant for when using other hand, have also studied resistive switching Au/Ti/h-BN/Pt, Au/Ti/h-BN/Cu, Au/Ag/h-BN/Fe devices, demonstrated low variability they are same grain.
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