1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays
作者： C. Ahn , Z. Jiang , C.-S. Lee , H.-Y. Chen , J. Liang
关键词: Resistive random-access memory 、 Carbon nanotube 、 Transistor 、 Electrical engineering 、 Phase-change material 、 Contact area 、 Optoelectronics 、 Communication channel 、 Non-volatile memory 、 Electrode 、 Materials science
摘要: … Here, we report that the integrated bipolar Al2O3-based RRAM consumes programming … 1TnR RRAM cell also has self-compliance characteristics, because the semiconducting carbon …
harvard.edu
sci-hub.se 参考文章(27)
K. Kurotsuchi, Y. Sasago, A. Shima, H. Minemura, Y. Anzai, T. Mine, T. Takahama, S. Morita, T. Takahashi, T. Morimoto, M. Kinoshita, T. Kobayashi, M. Tai, Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput symposium on vlsi technology. pp. 96- 97 ,(2011)
I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements Journal of Applied Physics. ,vol. 87, pp. 4130- 4134 ,(2000) , 10.1063/1.373041
Yang Chai, Shimeng Yu, H. S. Philip Wong, Hong-Yu Chen, Yi Wu, Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application symposium on vlsi technology. pp. 26- 27 ,(2011)
K. Kurotsuchi, Y. Sasago, N. Takaura, S. Hanzawa, A. Shima, H. Kume, T. Morikawa, T. Mine, K. Torii, Y. Fujisaki, M. Kinoshita, H. Moriya, Cross-point phase change memory with 4F 2 cell size driven by low-contact-resistivity poly-Si diode symposium on vlsi technology. pp. 24- 25 ,(2006)
Chih-Yuan Lu, Kuang-Yeu Hsieh, Rich Liu, Future challenges of flash memory technologies Microelectronic Engineering. ,vol. 86, pp. 283- 286 ,(2009) , 10.1016/J.MEE.2008.08.007
M. J. Kang, T. J. Park, Y. W. Kwon, D. H. Ahn, Y. S. Kang, H. Jeong, S. J. Ahn, Y. J. Song, B. C. Kim, S.W. Nam, H. K. Kang, G. T. Jeong, C. H. Chung, PRAM cell technology and characterization in 20nm node size international electron devices meeting. ,(2011) , 10.1109/IEDM.2011.6131478
Jiun-Jia Huang, Yi-Ming Tseng, Chung-Wei Hsu, Tuo-Hung Hou, Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications IEEE Electron Device Letters. ,vol. 32, pp. 1427- 1429 ,(2011) , 10.1109/LED.2011.2161601
H-S Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T Chen, Ming-Jinn Tsai, None, Metal–Oxide RRAM Proceedings of the IEEE. ,vol. 100, pp. 1951- 1970 ,(2012) , 10.1109/JPROC.2012.2190369
Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wenshing Liu, Pei-Yi Gu, Frederick Chen, Ming-Jinn Tsai, Improved endurance in ultrathin Al2O3 film with a reactive Ti layer based resistive memory Solid-state Electronics. ,vol. 77, pp. 41- 45 ,(2012) , 10.1016/J.SSE.2012.05.027
G. Pourtois, H. Bender, L. Altimime, D.J. Wouters, J.A. Kittl, M. Jurczak, B. Govoreanu, G.S. Kar, Y-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I.P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation international electron devices meeting. ,(2011) , 10.1109/IEDM.2011.6131652