Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
作者： H. Z. Zhang , D. S. Ang , K. S. Yew , X. P. Wang
DOI: 10.1063/1.4942801
关键词:
摘要: This study shows that a majority (70%) of TiN/HfOx/TiN devices exhibit failed complementary resistance switching (CRS) after forming. In conjunction with the consistent observation large non-polar reset loop in first post-forming voltage-sweep measurement, it is proposed breakdown TiN/HfOx interfacial oxide layers (crucial enabling CRS) and accompanied formation Ti filaments (due to migration from TiN cathode into path) resulted CRS failure observed behavior. hypothesis supported by significant reduction or complete elimination thin Al2O3 layer incorporated at TiN-cathode/HfOx both interfaces. The higher field enables sustain forming voltage until process interrupted, thus via oxygen exchange adjacent vacancy-type filament formed HfOx.
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