Real-time study of switching kinetics in integrated 1T/ HfO x 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time
作者： S Koveshnikov , Ken Matthews , Kyu Min , DC Gilmer , MG Sung
DOI: 10.1109/IEDM.2012.6479080
关键词:
摘要: We have developed novel real-time methodology to determine intrinsic forming and switching characteristics of HfO x based RRAM. Elimination parasitics in 50nm × cross-bar 1T1R devices (C p RRAM for future memory applications.
sci-hub.se 参考文章(1)
Daniele Ielmini, Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth IEEE Transactions on Electron Devices. ,vol. 58, pp. 4309- 4317 ,(2011) , 10.1109/TED.2011.2167513