Method of producing a thin silicon-on-insulator layer
作者： Francis J. Code Kub , Harold L. Code Hughes , David J. Code Godbey
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摘要: 2066193 9105366 PCTABS00004 A process for fabricating thin film silicon wafers using a novel etch stop composed of silicon-germanium alloy (24) includes properly doping prime wafer (20) the desired application, growing strained Si1-x Gex layer onto seed to serve as an stop, (26) on with thickness form active device region, oxidizing and test (30), bonding oxide surfaces (30) (20), machining backside selectively etching same remove (20 22) removing by non-selective etch, thereby leaving region (26). In alternate embodiment, implanting germanium, tin, or lead ions (24).
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