A SIMPLE LASER BASED PROCESS FOR THE FORMATION OF A LBSF FOR N-TYPE SILICON SOLAR CELLS
作者： J. Benick , S.W. Glunz , S. Janz , R. Preu , U. Jäger
DOI: 10.4229/25THEUPVSEC2010-2CO.5.1
关键词:
摘要: We present a simple laser process for the formation of local back surface field (LBSF) n-type silicon solar cells. Point contacts are formed by applying to doped, passivating layer amorphous carbide (PassDop layer). In single processing step, point opened and doping underlying is done. A variation in dopant content fluency enables control profile. The effectiveness LBSF structure investigated on lifetime samples. find that high PassDop medium fluencies yield best values suppression recombination at contact.
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