作者: James E. Johns , Justice M. P. Alaboson , Sameer Patwardhan , Christopher R. Ryder , George C. Schatz
DOI: 10.1021/JA408248Z
关键词:
摘要: Chemically interfacing the inert basal plane of graphene with other materials has limited development graphene-based catalysts, composite materials, and devices. Here, we overcome this limitation by chemically activating epitaxial on SiC(0001) using atomic oxygen. Atomic oxygen produces epoxide groups graphene, which act as reactive nucleation sites for zinc oxide nanoparticle growth layer deposition precursor diethyl zinc. In particular, exposure epoxidized to abstracts oxygen, creating mobile species that diffuse surface form metal clusters. This mechanism is corroborated a combination scanning probe microscopy, Raman spectroscopy, density functional theory can likely be generalized wide variety related reactions graphene.