Stress relaxation in GaN by transfer bonding on Si substrates
作者： S. C. Hsu , B. J. Pong , W. H. Li , Thomas E. Beechem , Samuel Graham
DOI: 10.1063/1.2821224
关键词:
摘要: … onto Si substrates through a Au–Si bonding process was … the Au bonding thickness from 1 to 40 μ m , the high compressive stress state in GaN layer was relieved. A 10 μ m Au bonding …
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