作者: Sea-Hoon Lee , Shuqi Guo , Hidehiko Tanaka , Kenji Kurashima , Toshiyuki Nishimura
DOI: 10.1016/J.JEURCERAMSOC.2007.11.012
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摘要: Abstract Thermal decomposition of AlN–SiC(–TiB 2 ) systems during densification was analyzed, and effects B, B 4 C on the behavior were studied. SiO impurity in powder mixture nearly completely removed by carbothermal reaction at 1500 °C vacuum, while Al O 3 remained affected system. The onset temperature a AlN–SiC–TiB system decreased from 2050 to 1850 °C addition carbon, which further (1680 °C) adding both carbon. Dense specimens obtained after hot pressing 2000 °C application carbon boron or C. Young's modulus, hardness, fracture toughness thermal conductivity sintered with 313 GPa, 18.2 GPa, 3.7 MPa m 1/2 22.9 W/(m °C), respectively.