The effect of aluminum additive on pressureless sintering of SiC
作者： H. Ghezelbash , A. Zeinali , N. Ehsani , H. R. Baharvandi
DOI: 10.1007/S41779-019-00310-0
关键词:
摘要: This study was carried out to investigate the effect of Al additive amount on microstructure development and room temperature mechanical properties pressureless sintered silicon carbide. Different amounts containing 1, 2.5, 5, 10, 15 wt% were added base material sintering conducted at 1950 °C for 1 h under argon atmosphere. The formation Al4SiC4 phase during conventional confirmed by X-ray diffraction (XRD) analysis. Microstructure, crystal phases, density evolution studied correlated additions pre-sintered proceedings. obtained results show that addition not only improves sinterability lower temperature, but also enhances densification hardness SiC samples (3.05 g/cm3 26.9 GPa respectively).
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