Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell.
作者： Yabin Chen , Feng Ke , Penghong Ci , Changhyun Ko , Taegyun Park
DOI: 10.1021/ACS.NANOLETT.6B03785
关键词:
摘要: Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. …
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