Correlation between structure and electrical resistivity of W-Cu thin films prepared by GLAD co-sputtering

摘要: Abstract W-Cu thin films were co-deposited by magnetron sputtering using the glancing angle deposition (GLAD) method. The of W and Cu targets was fixed at 80°, their currents inversely systematically changed from 50 to 140 mA. Scanning electron microscopy, X-ray fluorescence spectroscopy, diffraction used investigate morphology elemental composition films. Electrical properties also studied van der Pauw technique. An increase target current a decrease produced an improvement inclined columnar porous structure. W-to-Cu weight concentration ratio tuned 0.68 up 19. exhibited diffracted signal corresponding (100) planes bcc tungsten structure for highest intensities whereas (111) peak due fcc copper phase measured when increased. dc electrical resistivity room temperature gradually 3.59 × 10− 7 9.90 × 10− 6 Ωm means inverse variation currents. Cu-rich non-reversible vs. evolution thermal oxidation those co-sputtered with showed sudden above 400 K.