Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
作者： B. Luo , Jihyun Kim , F. Ren , J. K. Gillespie , R. C. Fitch
DOI: 10.1063/1.1559631
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摘要: Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding approximately 10 years in low-earth orbit (5×109 cm−2). Devices an AlGaN cap layer showed less degradation dc characteristics than comparable GaN-cap devices, consistent differences average band energy. The changes device performance could be attributed completely bulk trapping effects, demonstrating that the effectiveness of Sc2O3 layers passivating surface states drain-source region was undiminished by proton irradiation. AlGaN/HEMTs appear attractive candidates for space and terrestrial applications where resistance fluxes ionizing radiation is criteria.
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sci-hub.se 参考文章(30)
B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, D. Schoenfeld, A. G. Baca, Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 80, pp. 604- 606 ,(2002) , 10.1063/1.1445809
B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han, Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. ,vol. 80, pp. 1661- 1663 ,(2002) , 10.1063/1.1455692
J. W. Johnson, B. P. Gila, B. Luo, K. P. Lee, C. R. Abernathy, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo, F. Ren, SiO2 / Gd2 O 3 / GaN Metal Oxide Semiconductor Field Effect Transistors Journal of The Electrochemical Society. ,vol. 148, ,(2001) , 10.1149/1.1368110
SJ Cai, YS Tang, R Li, YY Wei, L Wong, YL Chen, KL Wang, Mary Chen, RD Schrimpf, JC Keay, KF Galloway, None, Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE IEEE Transactions on Electron Devices. ,vol. 47, pp. 304- 307 ,(2000) , 10.1109/16.822272
M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. ,vol. 77, pp. 1339- 1341 ,(2000) , 10.1063/1.1290269
G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M.S. Shur, R. Gaska, High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors Physica Status Solidi (a). ,vol. 188, pp. 219- 222 ,(2001) , 10.1002/1521-396X(200111)188:1<219::AID-PSSA219>3.0.CO;2-L
W S Tan, P A Houston, P J Parbrook, G Hill, R J Airey, Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors Journal of Physics D. ,vol. 35, pp. 595- 598 ,(2002) , 10.1088/0022-3727/35/7/304
Jeremy K. Burdett, Electronic structure and properties of solids The Journal of Physical Chemistry. ,vol. 100, pp. 13263- 13274 ,(1996) , 10.1021/JP953650B
X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska, Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors Applied Physics Letters. ,vol. 79, pp. 2832- 2834 ,(2001) , 10.1063/1.1412591
G. Simin, A. Koudymov, H. Fatima, Jianping Zhang, Jinwei Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, M.S. Shur, SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs IEEE Electron Device Letters. ,vol. 23, pp. 458- 460 ,(2002) , 10.1109/LED.2002.801316