Micro-Raman measurement of high-energy deuterium irradiated GaN
作者： Woo-Gwang Jung , Hong-Yeol Kim
DOI: 10.1016/J.MEE.2012.02.013
关键词:
摘要: Micro-Raman spectroscopy was used to examine the changes in structural and electrical properties of GaN films exposed high-energy deuterium irradiation. The locations larger structurally damaged regions, at irradiation energy 5MeV 10MeV, were determined by monitoring variations quasi-longitudinal optical phonon frequency. empirical penetration depths after 10MeV approximately 120 [email protected], respectively, where carrier concentrations lower than that pre-irradiated samples. Defect clusters generated crystal through collisions with lattice atoms, acted as traps. sample irradiation, which derived from (QLO) Raman shifts, ranged 5.5x10^1^5~9.0x10^1^5cm^-^3. reduced free concentration irradiated recovered almost its pre-irradiation values annealing 900^oC, whereas only partial recovery observed 10MeV. This study provides insights into degradation mechanism caused particle long-term reliability GaN-based electronic devices.
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sci-hub.se 参考文章(21)
B. Gil, Group III nitride semiconductor compounds : physics and applications Clarendon Press , Oxford University Press. ,(1998)
Raman scattering in materials science Springer. ,(2000) , 10.1007/978-3-662-04221-2
T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, K. Manabe, Thermal stress in GaN epitaxial layers grown on sapphire substrates Journal of Applied Physics. ,vol. 77, pp. 4389- 4392 ,(1995) , 10.1063/1.359465
B. Luo, Jihyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 82, pp. 1428- 1430 ,(2003) , 10.1063/1.1559631
A.Y Polyakov, A.S Usikov, B Theys, N.B Smirnov, A.V Govorkov, F Jomard, N.M Shmidt, W.V Lundin, Effects of proton implantation on electrical and recombination properties of n-GaN Solid-state Electronics. ,vol. 44, pp. 1971- 1983 ,(2000) , 10.1016/S0038-1101(00)00159-3
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, A. V. Osinsky, P. P. Chow, N. G. Kolin, V. M. Boiko, D. I. Merkurisov, Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions Applied Physics Letters. ,vol. 93, pp. 152101- ,(2008) , 10.1063/1.3000613
Marcie G. Weinstein, C. Y. Song, Michael Stavola, S. J. Pearton, R. G. Wilson, R. J. Shul, K. P. Killeen, M. J. Ludowise, Hydrogen-decorated lattice defects in proton implanted GaN Applied Physics Letters. ,vol. 72, pp. 1703- 1705 ,(1998) , 10.1063/1.121157
M. Yoon, Il-Woo Park, H. Choi, Sung Soo Park, Eui Kwan Koh, Free Carrier Concentration Gradient along thec-Axis of a Freestanding Si-doped GaN Single Crystal Japanese Journal of Applied Physics. ,vol. 44, pp. 828- 831 ,(2005) , 10.1143/JJAP.44.828
F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, P. Gibart, Proton bombardment-induced electron traps in epitaxially grown n-GaN Applied Physics Letters. ,vol. 74, pp. 407- 409 ,(1999) , 10.1063/1.123043
M. Katsikini, K. Papagelis, E. C. Paloura, S. Ves, Raman study of Mg, Si, O, and N implanted GaN Journal of Applied Physics. ,vol. 94, pp. 4389- 4394 ,(2003) , 10.1063/1.1606521