Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2
作者： Alberto F. Morpurgo , Alberto Ubaldini , Ashish Arora , Marek Potemski , Ignacio Gutiérrez Lezama
DOI: 10.1021/NL5045007
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摘要: We study the evolution of band gap structure in few-layer MoTe2 crystals, by means low-temperature microreflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis measurements indicate that complete analogy with other semiconducting transition metal dichalchogenides (TMDs) dominant PL emission peaks originate from direct transitions associated recombination excitons trions. When we follow intensity as a function layer thickness, however, observe behaves differently TMDs investigated earlier. Specifically, exciton yield (integrated intensity) is identical for mono bilayer, decreases slightly trilayer, it significantly lower tetralayer. this behavior all our experimental observations fully consistent bilayer being semiconductors tetralayer an indirect semiconduct...
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