Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same
作者： Soon-Hong Ahn , Jung-Hwa Lee
DOI:
关键词:
摘要: A semiconductor device includes first, second, and third wells. The first well is connected to a pad which an external pin first-type diffusion region that receives bias voltage. second adjacent the well, insulating second-type outside region. inside along with of constitute bipolar junction transistor cuts off current flowing from well.
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