Semiconductor device with ferroelectric and method of manufacturing the same

摘要: The structural body of a ferroelectric capacitor C is located over source region (23) between gate electrode (22) and local oxide film (26). has (29) an upper (30) lower (31) for sandwiching the (29), provided with conductive (32) (23). ITO, ReO 2 , RuO or MoO 3 . If oxygen anneal conducted after forming purpose reforming crystallizability enters into to some extent. As result, further oxidized, becomes so-called barrier dummy layer. Therefore, formation silicon hardly occurs on interface, reduction contact resistance avoidance series parasitic capacitance can be attained, degree freedom increased, high density integration schemed.