Capacitor and method for fabricating the same
作者： Masahiro Nishi
DOI:
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摘要: A capacitor which includes a lower electrode 12 formed on substrate 10 ; an insulation film 16 having opening 24 the dielectric 30 in and larger thickness at peripheral part of than central opening; upper 32 . Thus, degradation breakdown voltage stress resistance , is due to coverage film, can be suppressed.
google.de 参考文章(8)
Akihiko Ochiai, Masahiro Tanaka, Dielectric capacitor and method of manufacturing same, and dielectric memory using same ,(1999)
Kazuhiro Takenaka, Semiconductor device with ferroelectric and method of manufacturing the same ,(1991)
Pijush Bhattacharya, Scott R. Summerfelt, Yasushiro Nishioka, Kyung-ho Park, Pre-oxidizing high-dielectric-constant material electrodes ,(1996)
Keiji Hosotani, Yusuke Kohyama, DRAM having a cup-shaped storage node electrode recessed within an insulating layer ,(1998)
Hyae-ryoung Lee, Dong-Woo Kim, Sun-il Yu, Methods of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs ,(2000)
Keirei Ri, Fabrication of capacitor in semiconductor integrated device ,(2000)
Nishitsuji Mitsuru, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF ,(1993)
Nimata Hiroyuki, MANUFACTURE OF SEMICONDUCTOR DEVICE ,(1996)