MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要: PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device with which dielectric film forming capacity element can be prevented from being left as an etching residue in the edge part of wiring pattern other non-capacitance elements and yield improved, transistors such bipolar transistors, MOS etc., capacitance coexist example. SOLUTION: An SE 3 formed on region is covered protective 4 made material different elements, so that it covers 3, then removed while leaving only further finally removed.