Barium strontium titanate thin films by multi-ion-beam reactive sputtering technique
作者： C.-J. Peng , H. Hu , S.B. Krupanidhi
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摘要: Thin films of barium strontium titanate including BaTiO/sub 3/ and SrTiO/sub end members were deposited by the multi-ion-beam reactive sputtering (MIBERS) technique using alkaline earth oxides (BaO SrO) Ti-metal targets. The MIBERS showed convenient flexible control film compositions. dielectric constants on Pt-coated Si substrates thickness dependence. A constant 219 at 100 kHz was found for 1.2- mu m-thick films. charge storage density 15 fC/gmm/sup 2/ 5 V a leakage current 5.8 A/cm/sup an electric field 0.1 MV/cm can be obtained 0.3- are suitable application to 64-Mb dynamic random access memories (DRAMs). greater than 30 fC/ m/sup is achievable provided that some extrinsic factors which lower overall eliminated. used higher-memory-density DRAMs. >
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