Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors
作者： Youn Ho Park , Jun Woo Choi , Joonyeon Chang , Heon-Jin Choi , Hyun Cheol Koo
DOI: 10.1016/J.CAP.2015.02.018
关键词:
摘要: Abstract Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in spin field effect transistor. Depending on applied during sputtering, two different orientations exchange bias fields, +35.5 mT and −36.3 mT obtained. Using these electrodes, types transistors, which have roles n p-type transistors conventional complementary scheme, implemented. parameters extracted from experimental data, inverter operation is also presented.
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