Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing”

摘要: In our previous paper, we proposed a novel preparation technique termed "Chemical annealing" to make rigid and stable Si-network. this letter, with the aim of understanding role atomic hydrogen on growing surface, systematic studies were made concentrations H D for chemically annealed films by SiH4 deuterium system as function deposition time in one cycle, annealing substrate temperature. film, structural relaxation is thermally activated an activation energy 0.3 eV. The creation dangling bonds top surface enhancement cross linking reaction; passivation bond break weak Si-Si rearrangement comparison post-deutrization results, discussed.