Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound

作者: Kanji Yasui , Masahide Kimura , Tadashi Akahane

DOI: 10.1002/(SICI)1520-6432(199902)82:2<55::AID-ECJB7>3.0.CO;2-Z

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参考文章(14)
Kohgi Kato, Satoru Iizuka, Noriyoshi Sato, Electron‐temperature control for plasmas passing through a negatively biased grid Applied Physics Letters. ,vol. 65, pp. 816- 818 ,(1994) , 10.1063/1.112240
Kohgi Kato, Satoru Iizuka, Gautam Ganguly, Tohru Ikeda, Akihisa Matsuda, Noriyoshi Sato, Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane Japanese Journal of Applied Physics. ,vol. 36, pp. 4547- 4550 ,(1997) , 10.1143/JJAP.36.4547
Tetsuya Takeuchi, Hiroshi Amano, Kazumasa Hiramatsu, Nobuhiko Sawaki, Isamu Akasaki, Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer Journal of Crystal Growth. ,vol. 115, pp. 634- 638 ,(1991) , 10.1016/0022-0248(91)90817-O
Ajit P. Paranjpe, James P. McVittie, Sidney A. Self, A tuned Langmuir probe for measurements in rf glow discharges Journal of Applied Physics. ,vol. 67, pp. 6718- 6727 ,(1990) , 10.1063/1.345109
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, High-Power GaN P-N Junction Blue-Light-Emitting Diodes Japanese Journal of Applied Physics. ,vol. 30, pp. L1998- L2001 ,(1991) , 10.1143/JJAP.30.L1998
G. Bruno, P. Capezzuto, G. Cicala, F. Cramarossa, Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride Plasma Chemistry and Plasma Processing. ,vol. 6, pp. 109- 125 ,(1986) , 10.1007/BF00571271
W. v. Münch, P. Hoeck, Silicon carbide bipolar transistor Solid-State Electronics. ,vol. 21, pp. 479- 480 ,(1978) , 10.1016/0038-1101(78)90283-6
Hajime Shirai, Jun-ichi Hanna, Isamu Shimizu, Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing” Japanese Journal of Applied Physics. ,vol. 30, ,(1991) , 10.1143/JJAP.30.L679
Kanji Yasui, Masayoshi Muramoto, Tadashi Akahane, Structure of Microcrystalline Silicon Carbide Films Prepared by Hydrogen-Radical-Enhanced Chemical Vapor Deposition in Magnetic Field Japanese Journal of Applied Physics. ,vol. 33, pp. 4395- 4399 ,(1994) , 10.1143/JJAP.33.4395