Epitaxially grown semiconductor surfaces

摘要: The atomic distributions on surfaces of Si, GaAs, HgTe and CdTe are studied as functions temperature substrate orientation in the [100], [111] directions. Surface entropy is calculated within quasichemical approximation pair interaction energies obtained using tight-binding Green's function method. In most cases considered, interactions between atoms attractive they tend to congregate into islands for submonolayer coverage at temperatures below roughening transition temperatures. Free energy curves double-layer growth presented. We find that this case mostly layer by often observed or molecular epitaxial growth. However, such Ga terminated GaAs surfaces, in-plane predicted be repulsive. order-disorder these much larger than usual and, consequently, incompletely filled expected have domains which vacancies arrange themselves superlattice patterns.