Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures
DOI: 10.1063/1.3261835
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摘要: In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, values ideality factor (n) and barrier height (Φb) for Al/PSP/p-Si diode obtained as 1.45 0.81 eV, respectively. It was seen that Φb value eV calculated significantly larger than 0.50 conventional Al/p-Si Schottky diodes. Modification interfacial potential achieved thin interlayer PSP material. This has been attributed fact increases effective influencing space-charge region Si. The interface-state density determined, found vary from 3.00×1...
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