Method and structure for manufacturable large area gallium and nitrogen containing substrate

摘要: The present disclosure provides a method and structure for producing large area gallium nitrogen engineered substrate members configured the epitaxial growth of layer structures suitable fabrication high performance semiconductor devices. In specific embodiment substrates are used to manufacture containing devices based on an transfer process wherein as-grown layers transferred from carrier wafer processing. preferred embodiment, laser diode operating in 390 nm 425 range, 485 550 or greater than nm.