CHARACTERISTICS OF PULSED LASER DEPOSITED N-CARBON /P-SILICON HETEROJUNCTION

摘要: Heterojunction diodes, fabricated by depositing phosphorus (P) doped carbon thin film on p-type crystalline silicon substrate pulsed laser deposition technique, are analyzed and device parameters determined using experimental data. Camphor (C10H16O), a natural source, was used as starting precursor for the layer of heterojunction. Carbon layers heterojunction were obtained target containing different amounts phosphorus. Optical absorption, temperature dependent conductivity data films current density-voltage (J-V) characteristics analysed such intrinsic carrier concentration, donor conduction band effective density states, electron mass, hole mobility, diffusion constant, length minority lifetime in n-type side determined. All except concentration show increasing tendency with increased P content target. Donor increases up to 5% but then decreases 7% P.