Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells

摘要: Phosphorus (P)-doped carbon (n-C) films are deposited by pulsed laser deposition technique using a camphoric C target. The activation energy increased to approximately 0.23 eV for the film 1% P target compared undoped (0.17 eV), after which it decreases with further increase in content 0.12 from 7% Study of reveals that Fermi level n-C moves valence band near conduction edge through midgap. quantum efficiency (QE) n-C/p-Si cells is observed improve content. contribution QE lower wavelength region (below 750 nm) may be due photon absorption and higher Si substrates. current-voltage photovoltaic characteristics under 1 sun air-mass 1.5 (AM 1.5) illumination condition (100 mW/cm2, 25°C) improved up 5% deteriorate thereupon. open circuit voltage (Voc) short current density (Jsc) vary 220 270 mV 9 12 mA/cm2, respectively. cell yields highest electrical conversion efficiency, η=1.25% fill factor, FF = 53%. structural, Tauc gap, conductivity (together electron spin resonance spectroscopy) studies reveal successful doping containing upon modifications gap states.