Effect of In and Al interdiffusion on electron states and light absorption in InxGa1-x As/AlyGa1-y As quantum dots
作者： V. N. Mughnetsyan , A. A. Kirakosyan
DOI: 10.3103/S1068337207020038
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摘要: A new method of theoretical investigation the interdiffusion effect on electron states in quantum dots is proposed. The main point replacement “veritable” confining potential formed due to diffusion by a model potential, for which Schrodinger equation solutions and energy spectrum are known. In framework proposed we calculate positions edges conduction heavy hole bands absorption coefficient interband transitions depending length spherical InxGa1−xAs/AlyGa1−yAs dots, using Wood-Saxon as one.
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